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BSM200GA12DA11S Infineon

#BSM200GA12DA11S Infineon BSM200GA12DA11S New IGBT Power Module 1200V/200A/1400W, BSM200GA12DA11S pictures, BSM200GA12DA11S price, #BSM200GA12DA11S supplier
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Manufacturer: Infineon
Product Category: IGBT Modules
RoHS:  Details
Part No: BSM200GA12DA11S
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.5 V
Continuous Collector Current at 25 C: 300 A
Gate-Emitter Leakage Current: 200 nA
Pd – Power Dissipation: 1400 W
Package / Case: 62 mm
Minimum Operating Temperature: – 40°C
Maximum Operating Temperature: + 150°C
Packaging: Tray
Height: 36.5 mm
Length: 106.4 mm
Technology: Si
Width: 61.4 mm
Brand: Infineon Technologies
Mounting Style: Chassis Mount
Maximum Gate Emitter Voltage: 20 V
Product Type: IGBT Modules

IGBT Power Module 1200V/200A/1400W

Link:BSM200GA12DA11S Infineon

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